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dc.contributor.authorJeong, Il Ho
dc.contributor.authorMajd, Alireza Eslami
dc.contributor.authorJung, Jae Pil
dc.contributor.authorEkere, Nduka Nnamdi
dc.date.accessioned2020-07-07T08:22:53Z
dc.date.available2020-07-07T08:22:53Z
dc.date.issued2020-04-02
dc.identifier.citationJeong, I.H., Eslami Majd, A., Jung, J.P. and Ekere, N.N. (2020) Electrical and Mechanical Analysis of Different TSV Geometries. Metals 2020, 10, 467.en
dc.identifier.issn2075-4701en
dc.identifier.doi10.3390/met10040467en
dc.identifier.urihttp://hdl.handle.net/2436/623328
dc.description© 2020 The Authors. Published by MDPI. This is an open access article available under a Creative Commons licence. The published version can be accessed at the following link on the publisher’s website: https://doi.org/10.3390/met10040467en
dc.description.abstractThrough-silicon via (TSV) is an important component for implementing 3-D packages and 3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through direct contact to help facilitate high-speed signal processing. By facilitating the stacking of silicon chips, the TSV technology also helps to meet the increasing demand for high density and high performance miniaturized electronic products. Our review of the literature shows that very few studies have reported on the impact of TSV bump geometry on the electrical and mechanical characteristics of the TSV. This paper reports on the investigation of different TSV geometries with the focus on identifying the ideal shapes for improved electrical signal transmission as well as for improved mechanical reliability. The cylindrical, quadrangular (square), elliptical, and triangular shapes were investigated in our study and our results showed that the quadrangular shape had the best electrical performance due to good characteristic impedance. Our results also showed that the quadrangular and cylindrical shapes provided improved mechanical reliability as these two shapes lead to high Cu protrusion of TSV after the annealing process.en
dc.formatapplication/pdfen
dc.languageEnglish
dc.language.isoenen
dc.publisherMDPIen
dc.relation.urlhttps://www.mdpi.com/2075-4701/10/4/467en
dc.subjectTSVen
dc.subjectelectrical analysisen
dc.subjectmechanical analysisen
dc.subjectsimulationen
dc.titleElectrical and mechanical analysis of different TSV geometriesen
dc.typeJournal articleen
dc.identifier.eissn2075-4701
dc.identifier.journalMetalsen
dc.date.updated2020-06-27T14:37:18Z
dc.identifier.articlenumber467
dc.date.accepted2020-03-31
rioxxterms.funderUniversity of Wolverhamptonen
rioxxterms.identifier.projectUOW07072020NEen
rioxxterms.versionVoRen
rioxxterms.licenseref.urihttps://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2020-07-07en
dc.source.volume10
dc.source.issue4
refterms.dateFCD2020-07-07T08:21:35Z
refterms.versionFCDVoR
refterms.dateFOA2020-07-07T08:22:54Z


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